IRG7PH30K10PBF transistor equivalent, insulated gate bipolar transistor.
*
*
*
*
*
*
*
*
* Low VCE (ON) Trench IGBT Technology Low Switching Losses Maximum Junction Temperature 175 °C 10 µS short Circuit SOA.
* Suitable for a Wide Range of Switching Frequencies due to Low VCE (ON) and Low Switching Losses
* Rugged Trans.
Image gallery
TAGS
Manufacturer
Related datasheet
Download (Size : 350.46KB)